A first pass success is always welcome. When the sucess is a high frequency device it is doubly so. The latest addition to the high frequency, silicon proven ASSP portfolio, is a high frequency, wideband amplifer fabricated in a 0.35um SiGe process.

It is fairly general purpose and can be used as gain block, an LNA etc. The basic features are as follows:

Features:

Usable frequency gain = 100 to > 2500 Mhz
19 dB typical ac gain at 900 Mhz, VCC = 2.7V
NFMIN = 1.2 dB at 900 Mhz
NFMIN = 1.5 dB at 2500 Mhz
1 dB compression point at 900 Mz = 2.9 dBm
1 dB compression point at 2500 Mz = 0.9 dBm
OIP3 at 1.5 Ghz = 15.0 dBm
OIP3 at 2.5 Ghz = 10.0 dBm
Power supply from 2.7 to 5.0 Volt
Power supply current typical = 4.7 mA
Reverse isolation s12 = -48.0 dB min.

The device was tested from -55 Degrees C to 125 Degrees C. An extended frequency test was also done at 5.0 Ghz. The gain dropped to 17 dB. Other parameters were also slightly affected.

Anyone with interest in this device and its development may contact the author via the website located at www.signalpro.biz.