1/f noise in MOSFETs is a subject for continual study. Multiple noise models have been derived and studied. Each of these have some advantages and disadvantages. At SPG we have used a simple model of 1/f MOSFET noise for some time. It has served its purpose in allowing us to at least estimate the 1/f noise for our design purposes. By using some kind of thumb rule, most appropriate to a particular design it is quite possible to use this model effectively. The model is presented below with credit to the source. The calculation based on this model has also been coded into a javascript that is available for the user. The original author of the paper is: Chorng – Kuang Wang. This model is further described in a Memorandum No. UCB/ERL M79/78 issued by UC Berkeley. Please visit the Signal Processing Group Inc., website to acces the script. The link can be found under :”Complementary” items.

If you are interested in developing a custom analog chip or a RF IC please check out our custom design services  by clicking on the image below.

Check out our RF amplifiers. Click on the image below.