Bipolar switching circuit performance parameters

As analog engineers focus on parameters such as the transition frequency of a bipolar device to estimate frequency performance of a transistor ( which is more of a small signal parameter). We sometimes get confused if we have to use a bipolar as a switching device. Especially in a saturated mode of switching. In this case the base of the bipolar is driven hard enough ( lots of base current) to drive the transistor when it is ON to store charge in its base region. The output voltage at the collector drops to its Vsat ( a few hundred millivolts usually) and when the transistor has to leave this state it has to contend with a storage time. So when we want to estimate the switching speed of a bipolar we need to use the datasheet parameters of the device that apply to the switching mode. These parameters are: td = delay time , tr = rise time, tf = fall time and ts = storage time. Then the maximum switching frequency of the bipolar is given by ( estimate), fmax=1/( td+tr+tf+ts). Note that ft, the transition frequency does not enter into this equation at all! For more technical info and services please visit our website.

We design and deliver analog and RF/wireless ASICs and modules using state of the art semiconductor, PCB and assembly technologies. Please contact us at spg@signalpro.biz for a quote and a proposal.

Leave a Reply