BAW stands for Bulk Acoustic Wave (BAW). BAW Filters are low cost RF filters that are used over a broad band of applications. Like SAW filters BAW filters are based on converting RF energy to acoustic energy. However they are expensive items, They provide high frequency operation. Please visit the SPG website for more information and technical items.
Signal Processing Group is alive and well and operating as usual. Contact us for analog, RF, Microwave product design, ASICs as well as modules. We can now do 3D modeling using Shapr3d and Solidworks, so we can produce enclosures. Latest work on RFMW is a K band amplifier. Other RFPA’s are a S band amplifier, Find us on Digikey as well where we have started to sell our products starting with a wideband 1dB NF LNA and a wideband RF detector. Many more products to follow. Take a look at our blog for valuable tech. info as well.
( www.signalpro.biz/wordpress) or just go to our website at www.signalpro.biz any time 24/7. We look forward to your visit. You can contact us via email at spg@signalpro.biz anytime.
Having designed RFMW circuits, ASICs, RFICs and modules for a long time and used most simulators to do the analysis ( the latest in line being ADS and Microwave Office) we added the ANSYS tool HFSS to the repertoire. Although it does not seem to be used as widely as the SPICE based simulators we found it to be of great value in our analysis and a great help in deriving parameters not produced by either of the two aforementioned CAD tools. It provides EM analysis, power analysis, fields and radiation analysis which is a real help in our RFMW design efforts. The philosophy of the tool is slightly different from the usual tools. However, if you want to reduce the risk on your design to a irreducible minimum then HFSS and some of the other ANSYS tools can come in real handy. More on the HFSS tool analysis in this blog to follow. Please visit our website for more analog, RFMW ASIC and module information.
Phase margin is an important specification for closed loop systems and in op amps specifically. It can be difficult to understand intuitively. A recent post by Signal Processing Group provides a way to understand this specification. Please visit our website and select the “complementary” tab and then access the article on phase margin.
The product of the MOSFET transconductance ( KP/KN) and the aspect ratio ( W/L) is being labeled as the gain of the operating MOSFET. A simple calculator to do this is now available for a first order estimate on the Signal Processing Group website. Please check the “complementary” item menu in the SPG website for this and other items of interest.
In analog CMOS design the MOSFET is usually operated in saturation where the IDS – VDS curves are close to being flat. The slight slope leads to the definition of the channel length modulation parameter. A simple calculator has been released by Signal Processing Group to allow a first order calculation of this current as starting points of a design. Please visit the SPG website and look under the “calculators” menu item.
The body effect parameter comes into play for analog CMOS design when the source and substrate is not connected to the same node but have a reverse bias voltage across them. It affects the threshold voltage of the MOSFET and thereby is critical to the operation of the MOSFET. Signal Processing Group has released a simple calculator to evaluate this parameter given the substrate doping and the gate capacitance. The solution is based on a first order model and is primarily useful as a starting point for design. Please visit the Signal Processing Group website for this and other very useful information.
The surface potential in a strongly inverted MOSFET is one of the component parameters in the calculation of current in strong inversion ( or for that matter in weak inversion) of a MOSFET. It is used in the calculation of the threshold voltage. It depends strongly on the surface concentration of the MOSFET and the intrinsic concentration of the substrate ( ni). Signal Processing Group has released a simple calculator for first order calculations of this important quantity. Please visit the Signal Processing Group website and look under the ” calculators” menu item to find this calculator as well as many others.
The gm of a MOSFET in saturation ( in the strong inversion region) is an important parameter for analog CMOS design. The hand calculation value is easy to calculate using a simple calculator such as the one that Signal Processing Group has released on their website. Please visit the Signal Processing Group website and look under the “calculators” menu.
The effective gate voltage of a MOSFET in strong inversion is a critical design parameter for MOSFET analog and digital design. It provides the designer with a simple way to do hand calculations of the current and size of the device. A simple calculator has been released by Signal Processing Group that may be used to do this calculation as a starting point for more fine tuning by an advanced circuit simulator. Please visit our website and search under the “calculators” menu.